Q: Which one of the following is correct in n-p-n transistor ?
(a)Collector and emitter terminals can be exchanged
(b)Collector is heavily doped, base width is small and emitter area is large
(c)Emitter, base and collector regions are equally doped
(d)Emitter is heavily doped, base width is small and collector area is large
Correct Answer: (d)
The correct answer is (b) 'Collector is heavily doped, base width is small and emitter area is large'. This question from the Science & Technology domain tests knowledge of Chemistry.